mono c-Si wafer, 8 inch

GrowthMethod

CZ

ConductivityType

P type

Dopant

Boron

Crystal Orientation

＜100＞±1°

Dislocation

None

Resistivity

1~3Ω.cm3~6Ω.cm

Diagonal

200±0.5mm

Side Length

156±0.5mm

Thickness

200±20μm

TTV

≤20μm

Bow

≤40μm

Saw Mark

≤15μm

Oxygen concentration

≤1.0×1018 atom/cm3

Life Time

≥15μs

Carbon

≤5.0×1016 atom/cm3

Surface Condition

No invisible crack,no stain